Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | Phototransistors |
| RoHS |
|
| Type | IR Chip |
| Product | Phototransistors |
| Maximum On-State Collector Current | 50 mA |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 100 mW |
| Product Type | Phototransistors |
| Lens Color/Style | Black |
| Package / Case | T-1 |
| Collector- Emitter Voltage VCEO Max | 70 V |
| Collector-Emitter Breakdown Voltage | 70 V |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Wavelength | 925 nm |
| Length | 3.2 mm |
| Width | 3.9 mm |
| Height | 4.5 mm |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 100 C |
| Packaging | Bulk |
| Brand | Vishay Semiconductors |
| Light Current | 3.2 mA |
| Peak Wavelength | 925 nm |
| Dark Current | 200 nA |
| Half Intensity Angle Degrees | 30 deg |
| Factory Pack Quantity | 5000 |
| Subcategory | Optical Detectors and Sensors |
