Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 20 S |
| Rds On - Drain-Source Resistance | 38 mOhms |
| Rise Time | 22 ns |
| Fall Time | 20 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 3.3 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TSOP-6 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | SI3 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SI3433CDV-GE3 |
| Brand | Vishay / Siliconix |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 30 nC |
| Technology | Si |
| Id - Continuous Drain Current | 6 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 50 ns |
| Typical Turn-On Delay Time | 20 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000705 oz |
| Tradename | TrenchFET |
