Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 125 mOhms |
| Rise Time | 32 ns |
| Fall Time | 36 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 250 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Length | 15.87 mm |
| Width | 5.31 mm |
| Height | 20.82 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | E |
| Packaging | Bulk |
| Brand | Vishay / Siliconix |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.8 V |
| Qg - Gate Charge | 85 nC |
| Technology | Si |
| Id - Continuous Drain Current | 29 A |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Typical Turn-Off Delay Time | 63 ns |
| Typical Turn-On Delay Time | 19 ns |
| Factory Pack Quantity | 480 |
| Subcategory | MOSFETs |
